Infineon Technologies 1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

Features

  • High current density
  • Best in class switching and conduction losses
  • Low inductive design
  • Low device capacitances
  • An intrinsic diode with reverse recovery charge
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • High efficiency for reduced cooling effort
  • Threshold-free on-state characteristics
  • Temperature independent switching losses
  • High-frequency operation
  • Increased power density
  • Optimized development cycle time and cost
  • RoHS compliant

Videos

Performance Graph

Performance Graph - Infineon Technologies 1200V CoolSiC™ Modules
Zveřejněno: 2019-01-07 | Aktualizováno: 2024-01-02