Avalanche Technology Parallel P-SRAM Memory

Avalanche Technology Parallel Persistent SRAM Memory are Magneto-Resistive Random-Access Memory (MRAM) that offers a density range from 1Mbit to 32Mbit. The P-SRAM memory operates from 2.7V to 3.6V voltage range. The P-SRAM memory devices are available in small footprint 54-pin TSOP, 44-pin TSOP, and 48-Ball FBGA packages. These packages are compatible with similar low-power volatile and non-volatile products. The parallel persistent SRAM memory devices are offered with -40°C to 85°C industrial and -40°C to 105°C industrial plus operating temperature ranges.

The MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM/P-SRAM). This MRAM is a true random-access memory that allows both reads and writes to occur randomly in memory. The MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. This technology offers low latency, low power, virtually infinite endurance and data retention, high performance, and scalable memory technology.


  • Interface:
    • Parallel asynchronous x16
  • Technology:
    • 40nm pMTJ STT-MRAM:
      • Virtually unlimited endurance and data retention
  • Density:
    • 1Mbit, 4Mbit, 8Mbit, 16Mbit, and 32Mbit
  • Operating voltage range:
    • VCC: 2.7V to 3.6V
  • Operating temperature ranges:
    • Industrial: -40°C to 85°C
    • Industrial Plus: -40°C to 105°C
  • Packages:
    • 44-pin TSOP (10mm x 18mm)
    • 54-pin TSOP (10mm x 22mm)
    • 48-ball FBGA (10mm x 10mm)
  • Memory array organization:
    • 1Mbit: 65,536 x 16
    • 4Mbit: 262,144 x 16
    • 8Mbit: 524,288 x 16
    • 16Mbit: 1,048,576 x 16
    • 32Mbit: 2,097,152 x 16
  • RoHS compliant

Block Diagram

Block Diagram - Avalanche Technology Parallel P-SRAM Memory
Zveřejněno: 2021-01-21 | Aktualizováno: 2022-03-11